Rohm Semiconductor RD3U080CNTL1

RD3U080CNTL1 Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 250V 8A (Tc) 85W (Tc) Surface Mount TO-252
Vgs(th) (Max) @ Id:
5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
RD3U080
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
Rds On (Max) @ Id, Vgs:
300mOhm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
250V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1440pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Customer Reference:
Power Dissipation (Max):
85W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RD3U080CNTL1. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 250v 8a (tc) 85w (tc) surface mount to-252. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: rd3u080. The maximum gate charge and given voltages include 25nc @ 10v. It has a maximum Rds On and voltage of 300mohm @ 4a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The rohm semiconductor's product offers user-desired applications. The product has a 250v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1440pf @ 25v. The product is available in surface mount configuration. to-252 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 8a (tc). The product carries maximum power dissipation 85w (tc). This product use mosfet (metal oxide) technology.

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RD3U080CN(Datasheets)

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