Toshiba Semiconductor and Storage TPCF8101(TE85L,F,M
Product Information
Base Part Number:
TC74HC4053
Detailed Description:
P-Channel 12V 6A (Ta) 700mW (Ta) Surface Mount VS-8 (2.9x1.5)
Input Capacitance (Ciss) (Max) @ Vds:
1600pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 200µA
Series:
*
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 5V
Rds On (Max) @ Id, Vgs:
28mOhm @ 3A, 4.5V
Supplier Device Package:
VS-8 (2.9x1.5)
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-SMD, Flat Lead
Power Dissipation (Max):
700mW (Ta)
Drain to Source Voltage (Vdss):
12V
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPCF8101(TE85L,F,M. Base Part Number: tc74hc4053. It features p-channel 12v 6a (ta) 700mw (ta) surface mount vs-8 (2.9x1.5). The product's input capacitance at maximum includes 1600pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.2v @ 200µa. The maximum gate charge and given voltages include 18nc @ 5v. It has a maximum Rds On and voltage of 28mohm @ 3a, 4.5v. vs-8 (2.9x1.5) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 8-smd, flat lead. The product carries maximum power dissipation 700mw (ta). The product has a 12v drain to source voltage. The continuous current drain at 25°C is 6a (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.
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