Toshiba Semiconductor and Storage SSM6J51TUTE85LF
Product Information
Base Part Number:
2SC3668
Detailed Description:
P-Channel 12V 4A (Ta) 500mW (Ta) Surface Mount UF6
Input Capacitance (Ciss) (Max) @ Vds:
1700pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Drain to Source Voltage (Vdss):
12V
Rds On (Max) @ Id, Vgs:
54mOhm @ 2A, 2.5V
Supplier Device Package:
UF6
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
6-SMD, Flat Leads
Power Dissipation (Max):
500mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6J51TUTE85LF. Base Part Number: 2sc3668. It features p-channel 12v 4a (ta) 500mw (ta) surface mount uf6. The product's input capacitance at maximum includes 1700pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 12v drain to source voltage. It has a maximum Rds On and voltage of 54mohm @ 2a, 2.5v. uf6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 6-smd, flat leads. The product carries maximum power dissipation 500mw (ta). The continuous current drain at 25°C is 4a (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.
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