Vishay Siliconix SQP120N06-06_GE3
Product Information
Rds On (Max) @ Id, Vgs:
6 mOhm @ 30A, 10V
Detailed Description:
N-Channel 60V 119A (Tc) 175W (Tc) Through Hole TO-220AB
Input Capacitance (Ciss) (Max) @ Vds:
6495pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Series:
Automotive, AEC-Q101, TrenchFET®
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
145nC @ 10V
Supplier Device Package:
TO-220AB
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-220-3
Power Dissipation (Max):
175W (Tc)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
119A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Vishay Siliconix
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Yes. We ship SQP120N06-06_GE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SQP120N06-06_GE3. It has a maximum Rds On and voltage of 6 mohm @ 30a, 10v. It features n-channel 60v 119a (tc) 175w (tc) through hole to-220ab. The product's input capacitance at maximum includes 6495pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product automotive, aec-q101, trenchfet®, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 145nc @ 10v. to-220ab is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 175w (tc). The product has a 60v drain to source voltage. The continuous current drain at 25°C is 119a (tc). This product use mosfet (metal oxide) technology. The vishay siliconix's product offers user-desired applications.
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