STMicroelectronics STD11N65M5
Product Information
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
6.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
710 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
480 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
85 W
Series:
MDmesh M5
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
2.4mm
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
480mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STD11N65M5 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/3088025
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
85W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
620 pF @ 100 V
standardLeadTime:
16 Weeks
Mounting Type:
Surface Mount
Series:
MDmesh™ V
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD11
ECCN:
EAR99
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Yes. We ship STD11N65M5 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STD11N65M5. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.2mm wide. The product offers single transistor configuration. It has a maximum of 710 v drain source voltage. The product carries 5v of maximum gate threshold voltage. It provides up to 480 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 85 w maximum power dissipation. The product mdmesh m5, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 2.4mm. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 480mohm @ 4.5a, 10v. The maximum gate charge and given voltages include 17 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 85w (tc). The product's input capacitance at maximum includes 620 pf @ 100 v. It has a long 16 weeks standard lead time. The product mdmesh™ v, is a highly preferred choice for users. dpak is the supplier device package value. The continuous current drain at 25°C is 9a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to std11, a base product number of the product. The product is designated with the ear99 code number.
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