STMicroelectronics STD11N65M5
Product Information
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
6.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
710 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
480 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
85 W
Series:
MDmesh M5
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
2.4mm
Manufacturer Standard Lead Time:
38 Weeks
Detailed Description:
N-Channel 650V 9A (Tc) 85W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
STD11
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
Rds On (Max) @ Id, Vgs:
480mOhm @ 4.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
620pF @ 100V
Mounting Type:
Surface Mount
Series:
MDmesh™ V
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Customer Reference:
Power Dissipation (Max):
85W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship STD11N65M5 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STD11N65M5. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.2mm wide. The product offers single transistor configuration. It has a maximum of 710 v drain source voltage. The product carries 5v of maximum gate threshold voltage. It provides up to 480 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 85 w maximum power dissipation. The product mdmesh m5, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 2.4mm. It has typical 38 weeks of manufacturer standard lead time. It features n-channel 650v 9a (tc) 85w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: std11. The maximum gate charge and given voltages include 17nc @ 10v. It has a maximum Rds On and voltage of 480mohm @ 4.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The stmicroelectronics's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 620pf @ 100v. The product mdmesh™ v, is a highly preferred choice for users. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9a (tc). The product carries maximum power dissipation 85w (tc). This product use mosfet (metal oxide) technology.
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