ON Semiconductor VN2222LL
Product Information
Base Part Number:
VN2222
Detailed Description:
N-Channel 60V 150mA (Ta) 400mW (Ta) Through Hole TO-92 (TO-226)
Input Capacitance (Ciss) (Max) @ Vds:
60pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
7.5Ohm @ 500mA, 10V
Supplier Device Package:
TO-92 (TO-226)
Packaging:
Tape & Box (TB)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Power Dissipation (Max):
400mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
150mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14545635 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14545635.
Yes. We ship VN2222LL Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is VN2222LL. Base Part Number: vn2222. It features n-channel 60v 150ma (ta) 400mw (ta) through hole to-92 (to-226). The product's input capacitance at maximum includes 60pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It has a maximum Rds On and voltage of 7.5ohm @ 500ma, 10v. to-92 (to-226) is the supplier device package value. In addition, tape & box (tb) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-226-3, to-92-3 long body (formed leads). The product carries maximum power dissipation 400mw (ta). The continuous current drain at 25°C is 150ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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