ON Semiconductor SI9435DY

ON Semiconductor

Product Information

Detailed Description:
P-Channel 30V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
SI943
Gate Charge (Qg) (Max) @ Vgs:
23nC @ 10V
Rds On (Max) @ Id, Vgs:
50mOhm @ 5.3A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
690pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5.3A (Ta)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is SI9435DY. It features p-channel 30v 5.3a (ta) 2.5w (ta) surface mount 8-soic. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Base Part Number: si943. The maximum gate charge and given voltages include 23nc @ 10v. It has a maximum Rds On and voltage of 50mohm @ 5.3a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 690pf @ 15v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. 8-soic is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5.3a (ta). The product carries maximum power dissipation 2.5w (ta). This product use mosfet (metal oxide) technology.

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SI9435DY(Datasheets)

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