Category:
Power MOSFET
Dimensions:
6.5 x 5.5 x 2.3mm
Maximum Continuous Drain Current:
19 A
Transistor Material:
Si
Width:
5.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
TP-FA
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
590 pF @ -20 V
Length:
6.5mm
Pin Count:
3
Typical Turn-Off Delay Time:
52 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.3mm
Typical Turn-On Delay Time:
8 ns
Maximum Drain Source Resistance:
59 mΩ
Base Part Number:
SFT135
Detailed Description:
P-Channel 40V 19A (Ta) 1W (Ta), 23W (Tc) Surface Mount TP-FA
Input Capacitance (Ciss) (Max) @ Vds:
590pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
59mOhm @ 9.5A, 10V
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 10V
Supplier Device Package:
TP-FA
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
1W (Ta), 23W (Tc)
Current - Continuous Drain (Id) @ 25°C:
19A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
