Category:
Power MOSFET
Dimensions:
1.6 x 1.5 x 0.56mm
Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
1.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
SCH6
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.9 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
172 pF @ -10 V
Length:
1.6mm
Pin Count:
6
Forward Transconductance:
1.9S
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
800 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.56mm
Typical Turn-On Delay Time:
4.5 ns
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
292 mΩ
Base Part Number:
SCH133
Detailed Description:
P-Channel 30V 2A (Ta) 800mW (Ta) Surface Mount SOT-563/SCH6
Input Capacitance (Ciss) (Max) @ Vds:
172pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
3.9nC @ 10V
Rds On (Max) @ Id, Vgs:
150mOhm @ 1A, 10V
Supplier Device Package:
SOT-563/SCH6
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SOT-563, SOT-666
Power Dissipation (Max):
800mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
