ON Semiconductor RFP50N05L

ON Semiconductor

Product Information

Base Part Number:
RFP50
Detailed Description:
N-Channel 50V 50A (Tc) 110W (Tc) Through Hole TO-220-3
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
50V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
140nC @ 10V
Rds On (Max) @ Id, Vgs:
22mOhm @ 50A, 5V
Supplier Device Package:
TO-220-3
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3
Power Dissipation (Max):
110W (Tc)
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is RFP50N05L. Base Part Number: rfp50. It features n-channel 50v 50a (tc) 110w (tc) through hole to-220-3. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 5v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has a 50v drain to source voltage. The maximum Vgs rate is ±10v. The maximum gate charge and given voltages include 140nc @ 10v. It has a maximum Rds On and voltage of 22mohm @ 50a, 5v. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 110w (tc). The continuous current drain at 25°C is 50a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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TO220B03 Pkg Drawing(Datasheets)
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RFP50N05L(Datasheets)

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