Maximum Continuous Drain Current:
16 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Priced to Clear:
Yes
Maximum Drain Source Voltage:
50 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
80 nC @ 20 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
72 W
Series:
MegaFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
47 mΩ
Manufacturer Standard Lead Time:
43 Weeks
Detailed Description:
N-Channel 50V 16A (Tc) 72W (Tc) Surface Mount TO-252AA
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
RFD16N05
Gate Charge (Qg) (Max) @ Vgs:
80nC @ 20V
Rds On (Max) @ Id, Vgs:
47mOhm @ 16A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
50V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
900pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Customer Reference:
Power Dissipation (Max):
72W (Tc)
Technology:
MOSFET (Metal Oxide)
