ON Semiconductor RFD14N05L
Product Information
Maximum Drain Source Voltage:
50 V
Typical Gate Charge @ Vgs:
25 nC @ 5 V, 40 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
48 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
6.3mm
Width:
2.5mm
Length:
6.8mm
Minimum Gate Threshold Voltage:
1V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Maximum Drain Source Resistance:
100 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
9 Weeks
Detailed Description:
N-Channel 50V 14A (Tc) 48W (Tc) Through Hole I-Pak
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number:
RFD14N05
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
Rds On (Max) @ Id, Vgs:
100mOhm @ 14A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
50V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
670pF @ 25V
Mounting Type:
Through Hole
Supplier Device Package:
I-Pak
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Customer Reference:
Power Dissipation (Max):
48W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor RFD14N05L. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor RFD14N05L.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14543692 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14543692.
Yes. We ship RFD14N05L Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is RFD14N05L. It has a maximum of 50 v drain source voltage. With a typical gate charge at Vgs includes 25 nc @ 5 v, 40 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 48 w maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. In addition, the height is 6.3mm. Furthermore, the product is 2.5mm wide. Its accurate length is 6.8mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of ipak (to-251). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 14 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 100 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 9 weeks of manufacturer standard lead time. It features n-channel 50v 14a (tc) 48w (tc) through hole i-pak. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. Base Part Number: rfd14n05. The maximum gate charge and given voltages include 40nc @ 10v. It has a maximum Rds On and voltage of 100mohm @ 14a, 5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. The on semiconductor's product offers user-desired applications. The product has a 50v drain to source voltage. The maximum Vgs rate is ±10v. The product's input capacitance at maximum includes 670pf @ 25v. i-pak is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 14a (tc). The product carries maximum power dissipation 48w (tc). This product use mosfet (metal oxide) technology.
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