Maximum Drain Source Voltage:
250 V
Typical Gate Charge @ Vgs:
4.2 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.5 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.5V
Height:
1.5mm
Width:
2.5mm
Length:
4.5mm
Maximum Drain Source Resistance:
2.4 Ω
Package Type:
SOT-89
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
1.2 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
PCP1402
Detailed Description:
N-Channel 250V 1.2A (Ta) 3.5W (Tc) Surface Mount SOT-89/PCP-2
Input Capacitance (Ciss) (Max) @ Vds:
210pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3.5V @ 1mA
Drain to Source Voltage (Vdss):
250V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
4.2nC @ 10V
Rds On (Max) @ Id, Vgs:
2.4Ohm @ 600mA, 10V
Supplier Device Package:
SOT-89/PCP-2
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-243AA
Power Dissipation (Max):
3.5W (Tc)
Current - Continuous Drain (Id) @ 25°C:
1.2A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
