ON Semiconductor NVMFS6B85NLWFT3G
Product Information
Detailed Description:
N-Channel 100V 5.6A (Ta), 19A (Tc) 3.5W (Ta), 42W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NVMFS6
Gate Charge (Qg) (Max) @ Vgs:
7.9nC @ 10V
Rds On (Max) @ Id, Vgs:
46mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
480pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
5.6A (Ta), 19A (Tc)
Customer Reference:
Power Dissipation (Max):
3.5W (Ta), 42W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship NVMFS6B85NLWFT3G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NVMFS6B85NLWFT3G. It features n-channel 100v 5.6a (ta), 19a (tc) 3.5w (ta), 42w (tc) surface mount 5-dfn (5x6) (8-sofl). The typical Vgs (th) (max) of the product is 2.4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn, 5 leads. Base Part Number: nvmfs6. The maximum gate charge and given voltages include 7.9nc @ 10v. It has a maximum Rds On and voltage of 46mohm @ 10a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±16v. The product's input capacitance at maximum includes 480pf @ 25v. The product is available in surface mount configuration. The product automotive, aec-q101, is a highly preferred choice for users. 5-dfn (5x6) (8-sofl) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 5.6a (ta), 19a (tc). The product carries maximum power dissipation 3.5w (ta), 42w (tc). This product use mosfet (metal oxide) technology.
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