Maximum Continuous Drain Current:
51 A
Width:
5.1mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
9.7 nC @ 4.5 V
Channel Type:
N
Length:
6.1mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
32 W
Series:
NVMFS4C310N
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
9 mΩ
Detailed Description:
N-Channel 30V 17A (Ta), 51A (Tc) 3.5W (Ta), 32W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NVMFS4
Gate Charge (Qg) (Max) @ Vgs:
18.6nC @ 10V
Rds On (Max) @ Id, Vgs:
6mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1000pF @ 15V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
17A (Ta), 51A (Tc)
Customer Reference:
Power Dissipation (Max):
3.5W (Ta), 32W (Tc)
Technology:
MOSFET (Metal Oxide)
