ON Semiconductor NVD6820NLT4G-VF01
Product Information
Detailed Description:
N-Channel 90V 10A (Ta), 50A (Tc) 4W (Ta), 100W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
NVD6820
Gate Charge (Qg) (Max) @ Vgs:
83nC @ 10V
Rds On (Max) @ Id, Vgs:
16.7mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
90V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4209pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 50A (Tc)
Customer Reference:
Power Dissipation (Max):
4W (Ta), 100W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship NVD6820NLT4G-VF01 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NVD6820NLT4G-VF01. It features n-channel 90v 10a (ta), 50a (tc) 4w (ta), 100w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: nvd6820. The maximum gate charge and given voltages include 83nc @ 10v. It has a maximum Rds On and voltage of 16.7mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 90v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 4209pf @ 25v. The product is available in surface mount configuration. The product automotive, aec-q101, is a highly preferred choice for users. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 10a (ta), 50a (tc). The product carries maximum power dissipation 4w (ta), 100w (tc). This product use mosfet (metal oxide) technology.
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