ON Semiconductor NVD5117PLT4G-VF01

NVD5117PLT4G-VF01 ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
49 Weeks
Detailed Description:
P-Channel 60V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
NVD511
Gate Charge (Qg) (Max) @ Vgs:
85nC @ 10V
Rds On (Max) @ Id, Vgs:
16mOhm @ 29A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4800pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
11A (Ta), 61A (Tc)
Customer Reference:
Power Dissipation (Max):
4.1W (Ta), 118W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NVD5117PLT4G-VF01. It has typical 49 weeks of manufacturer standard lead time. It features p-channel 60v 11a (ta), 61a (tc) 4.1w (ta), 118w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: nvd511. The maximum gate charge and given voltages include 85nc @ 10v. It has a maximum Rds On and voltage of 16mohm @ 29a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 4800pf @ 25v. The product is available in surface mount configuration. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 11a (ta), 61a (tc). The product carries maximum power dissipation 4.1w (ta), 118w (tc). This product use mosfet (metal oxide) technology.

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NVD5117PL(Datasheets)
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Mold Compound Update 25/Feb/2015(PCN Design/Specification)
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Mold Compound Revision 24/Apr/2015(PCN Design/Specification)

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