Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
180 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
283 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
4.83mm
Width:
9.65mm
Length:
10.29mm
Maximum Drain Source Resistance:
3 mΩ
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
220 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NVB586
Detailed Description:
N-Channel 60V 220A (Tc) 283W (Tc) Surface Mount D²PAK
Input Capacitance (Ciss) (Max) @ Vds:
10760pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
180nC @ 10V
Rds On (Max) @ Id, Vgs:
3mOhm @ 75A, 10V
Supplier Device Package:
D²PAK
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
283W (Tc)
Current - Continuous Drain (Id) @ 25°C:
220A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
