ON Semiconductor NTMSD3P102R2

NTMSD3P102R2 ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Schottky Diode (Isolated)
Detailed Description:
P-Channel 20V 2.34A (Ta) 730mW (Ta) Surface Mount 8-SOIC
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
NTMSD3
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
Rds On (Max) @ Id, Vgs:
85mOhm @ 3.05A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
750pF @ 16V
Mounting Type:
Surface Mount
Series:
FETKY™
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
2.34A (Ta)
Customer Reference:
Power Dissipation (Max):
730mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTMSD3P102R2. The FET features of the product include schottky diode (isolated). It features p-channel 20v 2.34a (ta) 730mw (ta) surface mount 8-soic. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Base Part Number: ntmsd3. The maximum gate charge and given voltages include 25nc @ 10v. It has a maximum Rds On and voltage of 85mohm @ 3.05a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 750pf @ 16v. The product is available in surface mount configuration. The product fetky™, is a highly preferred choice for users. 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 2.34a (ta). The product carries maximum power dissipation 730mw (ta). This product use mosfet (metal oxide) technology.

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Multiple Devices 06/Oct/2006(PCN Obsolescence/ EOL)
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NTMSD3P102R2(Datasheets)
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Copper Wire 12/May/2009(PCN Design/Specification)

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