Maximum Continuous Drain Current:
203 A
Width:
5.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
85 nC @ 10 V
Channel Type:
N
Length:
6.1mm
Pin Count:
5
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 W
Maximum Gate Source Voltage:
±20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
3.5 mΩ
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 80V 28A (Ta), 203A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
4V @ 330µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NTMFS6
Gate Charge (Qg) (Max) @ Vgs:
85nC @ 10V
Rds On (Max) @ Id, Vgs:
2.1mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5530pF @ 40V
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
28A (Ta), 203A (Tc)
Customer Reference:
Power Dissipation (Max):
3.8W (Ta), 200W (Tc)
Technology:
MOSFET (Metal Oxide)
