Category:
Power MOSFET
Dimensions:
5.1 x 6.1 x 1.1mm
Maximum Continuous Drain Current:
37 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
4.8 mΩ
Package Type:
SO-8FL
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
24.5 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3233 pF@ 12 V
Length:
5.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
28 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.72 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Typical Turn-On Delay Time:
17.6 ns
Minimum Operating Temperature:
-55 °C
Base Part Number:
NTMFS4
Detailed Description:
N-Channel 30V 13.2A (Ta), 117A (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Input Capacitance (Ciss) (Max) @ Vds:
3233pF @ 12V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Series:
*
Gate Charge (Qg) (Max) @ Vgs:
49.5nC @ 10V
Rds On (Max) @ Id, Vgs:
3mOhm @ 30A, 10V
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerTDFN, 5 Leads
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
13.2A (Ta), 117A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
