ON Semiconductor NTLJS4159NT1G

ON Semiconductor

Product Information

Base Part Number:
NTLJS41
Detailed Description:
N-Channel 30V 3.6A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
Input Capacitance (Ciss) (Max) @ Vds:
1045pF @ 15V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 4.5V
Rds On (Max) @ Id, Vgs:
35mOhm @ 2A, 4.5V
Supplier Device Package:
6-WDFN (2x2)
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
6-WDFN Exposed Pad
Power Dissipation (Max):
700mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
3.6A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTLJS4159NT1G. Base Part Number: ntljs41. It features n-channel 30v 3.6a (ta) 700mw (ta) surface mount 6-wdfn (2x2). The product's input capacitance at maximum includes 1045pf @ 15v. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has a 30v drain to source voltage. The maximum Vgs rate is ±8v. The maximum gate charge and given voltages include 13nc @ 4.5v. It has a maximum Rds On and voltage of 35mohm @ 2a, 4.5v. 6-wdfn (2x2) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 6-wdfn exposed pad. The product carries maximum power dissipation 700mw (ta). The continuous current drain at 25°C is 3.6a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 03/Apr/2007(PCN Obsolescence/ EOL)
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NTLJS4159N(Datasheets)

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