ON Semiconductor NTGS3443BT1G

ON Semiconductor

Product Information

Base Part Number:
NTGS34
Detailed Description:
P-Channel 20V 2.7A (Ta) 700mW (Ta) Surface Mount 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds:
819pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 4.5V
Rds On (Max) @ Id, Vgs:
60mOhm @ 3.7A, 4.5V
Supplier Device Package:
6-TSOP
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SOT-23-6
Power Dissipation (Max):
700mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTGS3443BT1G. Base Part Number: ntgs34. It features p-channel 20v 2.7a (ta) 700mw (ta) surface mount 6-tsop. The product's input capacitance at maximum includes 819pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.4v @ 250µa. The product has a 20v drain to source voltage. The maximum Vgs rate is ±12v. The maximum gate charge and given voltages include 11nc @ 4.5v. It has a maximum Rds On and voltage of 60mohm @ 3.7a, 4.5v. 6-tsop is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in sot-23-6. The product carries maximum power dissipation 700mw (ta). The continuous current drain at 25°C is 2.7a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 13/Apr/2009(PCN Obsolescence/ EOL)
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NTGS3443B(Datasheets)

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