Maximum Continuous Drain Current:
160 A
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
80.6 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
120 W
Maximum Gate Source Voltage:
±20 V
Height:
2.25mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.1 mΩ
Base Part Number:
NTD5C434
Detailed Description:
N-Channel 40V 33A (Ta), 160A (Tc) 4.7W (Ta), 120W (Tc) Surface Mount DPAK
Input Capacitance (Ciss) (Max) @ Vds:
5400pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
80.6nC @ 10V
Rds On (Max) @ Id, Vgs:
2.1mOhm @ 50A, 10V
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
4.7W (Ta), 120W (Tc)
Current - Continuous Drain (Id) @ 25°C:
33A (Ta), 160A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
