Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.38mm
Maximum Continuous Drain Current:
98 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
5.7 mΩ
Package Type:
IPAK
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
82 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5050 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
35 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
115 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.38mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
Base Part Number:
NTD58
Detailed Description:
N-Channel 60V 98A (Tc) 115W (Tc) Surface Mount DPAK
Input Capacitance (Ciss) (Max) @ Vds:
6000pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
82nC @ 10V
Rds On (Max) @ Id, Vgs:
5.7mOhm @ 45A, 10V
Supplier Device Package:
DPAK
Packaging:
Tube
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
115W (Tc)
Current - Continuous Drain (Id) @ 25°C:
98A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
