ON Semiconductor NTB85N03T4G

ON Semiconductor

Product Information

Base Part Number:
NTB85
Detailed Description:
N-Channel 28V 85A (Tc) 80W (Tc) Surface Mount D2PAK
Input Capacitance (Ciss) (Max) @ Vds:
2150pF @ 24V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
28V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 4.5V
Rds On (Max) @ Id, Vgs:
6.8mOhm @ 40A, 10V
Supplier Device Package:
D2PAK
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
80W (Tc)
Current - Continuous Drain (Id) @ 25°C:
85A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTB85N03T4G. Base Part Number: ntb85. It features n-channel 28v 85a (tc) 80w (tc) surface mount d2pak. The product's input capacitance at maximum includes 2150pf @ 24v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 28v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 29nc @ 4.5v. It has a maximum Rds On and voltage of 6.8mohm @ 40a, 10v. d2pak is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The product carries maximum power dissipation 80w (tc). The continuous current drain at 25°C is 85a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 13/Apr/2009(PCN Obsolescence/ EOL)
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NTB, NTP85N03(Datasheets)
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Mult Dev Material Chg 2/Oct/2018(PCN Design/Specification)

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