Maximum Continuous Drain Current:
40 A
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
81 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
313 W
Maximum Gate Source Voltage:
±30 V
Height:
4.58mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
82 mΩ
Manufacturer Standard Lead Time:
22 Weeks
Detailed Description:
N-Channel 650V 40A (Tc) 313W (Tc) Surface Mount D²PAK (TO-263)
Vgs(th) (Max) @ Id:
5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
NTB082
Gate Charge (Qg) (Max) @ Vgs:
81nC @ 10V
Rds On (Max) @ Id, Vgs:
82mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
3410pF @ 400V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Supplier Device Package:
D²PAK (TO-263)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Customer Reference:
Power Dissipation (Max):
313W (Tc)
Technology:
MOSFET (Metal Oxide)
