ON Semiconductor NDT2955
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.6mm
Width:
3.56mm
Length:
6.5mm
Minimum Gate Threshold Voltage:
2V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Maximum Drain Source Resistance:
300 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
25 Weeks
Detailed Description:
P-Channel 60V 2.5A (Ta) 3W (Ta) Surface Mount SOT-223-4
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Base Part Number:
NDT295
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 10V
Rds On (Max) @ Id, Vgs:
300mOhm @ 2.5A, 10V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
601pF @ 30V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223-4
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Customer Reference:
Power Dissipation (Max):
3W (Ta)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NDT2955. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NDT2955.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14540378 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14540378.
Yes. We ship NDT2955 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NDT2955. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 11 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.6mm. Furthermore, the product is 3.56mm wide. Its accurate length is 6.5mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 2.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 300 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 + tab pins. The product offers single transistor configuration. It has typical 25 weeks of manufacturer standard lead time. It features p-channel 60v 2.5a (ta) 3w (ta) surface mount sot-223-4. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. Base Part Number: ndt295. The maximum gate charge and given voltages include 15nc @ 10v. It has a maximum Rds On and voltage of 300mohm @ 2.5a, 10v. It carries FET type p-channel. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 601pf @ 30v. sot-223-4 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.5a (ta). The product carries maximum power dissipation 3w (ta). This product use mosfet (metal oxide) technology.
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