Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
3.5 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
+8 V
Height:
0.94mm
Width:
1.4mm
Length:
2.92mm
Minimum Gate Threshold Voltage:
0.5V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.3 A
Transistor Material:
Si
Maximum Drain Source Resistance:
160 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
38 Weeks
Detailed Description:
N-Channel 20V 1.3A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
NDS331
Gate Charge (Qg) (Max) @ Vgs:
5nC @ 4.5V
Rds On (Max) @ Id, Vgs:
160mOhm @ 1.5A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
162pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
SuperSOT-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.3A (Ta)
Customer Reference:
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
