Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
1.8 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
360 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.93mm
Width:
1.3mm
Length:
2.92mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
180 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
5 Ω
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
21 Weeks
Detailed Description:
P-Channel 60V 180mA (Ta) 360mW (Ta) Surface Mount SOT-23
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
NDS060
Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 10V
Rds On (Max) @ Id, Vgs:
5Ohm @ 500mA, 10V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
79pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
180mA (Ta)
Customer Reference:
Power Dissipation (Max):
360mW (Ta)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is NDS0605. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 1.8 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 360 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.93mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.92mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 180 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 5 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 21 weeks of manufacturer standard lead time. It features p-channel 60v 180ma (ta) 360mw (ta) surface mount sot-23. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: nds060. The maximum gate charge and given voltages include 2.5nc @ 10v. It has a maximum Rds On and voltage of 5ohm @ 500ma, 10v. It carries FET type p-channel. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 79pf @ 25v. sot-23 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 180ma (ta). The product carries maximum power dissipation 360mw (ta). This product use mosfet (metal oxide) technology.
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