Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
100 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.3mm
Width:
4.7mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
2V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
75 A
Transistor Material:
Si
Maximum Drain Source Resistance:
24 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Detailed Description:
N-Channel 60V 75A (Tc) 150W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-65°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
NDP706
Gate Charge (Qg) (Max) @ Vgs:
115nC @ 10V
Rds On (Max) @ Id, Vgs:
13mOhm @ 40A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3600pF @ 25V
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Customer Reference:
Power Dissipation (Max):
150W (Tc)
Technology:
MOSFET (Metal Oxide)
