ON Semiconductor NDH832P

ON Semiconductor

Product Information

Base Part Number:
NDH832
Detailed Description:
P-Channel 20V 4.2A (Ta) 1.8W (Ta) Surface Mount SuperSOT™-8
Input Capacitance (Ciss) (Max) @ Vds:
1000pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
-8V
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 4.5V
Rds On (Max) @ Id, Vgs:
60mOhm @ 4.2A, 4.5V
Supplier Device Package:
SuperSOT™-8
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-LSOP (0.130", 3.30mm Width)
Power Dissipation (Max):
1.8W (Ta)
Current - Continuous Drain (Id) @ 25°C:
4.2A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NDH832P. Base Part Number: ndh832. It features p-channel 20v 4.2a (ta) 1.8w (ta) surface mount supersot™-8. The product's input capacitance at maximum includes 1000pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 2.7v, 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has a 20v drain to source voltage. The maximum Vgs rate is -8v. The maximum gate charge and given voltages include 30nc @ 4.5v. It has a maximum Rds On and voltage of 60mohm @ 4.2a, 4.5v. supersot™-8 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 8-lsop (0.130", 3.30mm width). The product carries maximum power dissipation 1.8w (ta). The continuous current drain at 25°C is 4.2a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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NDH832P(Datasheets)

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