ON Semiconductor NDF04N62ZG

ON Semiconductor

Product Information

Base Part Number:
NDF04
Detailed Description:
N-Channel 620V 4.4A (Tc) 28W (Tc) Through Hole TO-220FP
Input Capacitance (Ciss) (Max) @ Vds:
535pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Drain to Source Voltage (Vdss):
620V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
19nC @ 10V
Rds On (Max) @ Id, Vgs:
2Ohm @ 2A, 10V
Supplier Device Package:
TO-220FP
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
28W (Tc)
Current - Continuous Drain (Id) @ 25°C:
4.4A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NDF04N62ZG. Base Part Number: ndf04. It features n-channel 620v 4.4a (tc) 28w (tc) through hole to-220fp. The product's input capacitance at maximum includes 535pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4.5v @ 50µa. The product has a 620v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 19nc @ 10v. It has a maximum Rds On and voltage of 2ohm @ 2a, 10v. to-220fp is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 28w (tc). The continuous current drain at 25°C is 4.4a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 20/Dec/2013(PCN Obsolescence/ EOL)
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ND(F,P,D)04N62Z(Datasheets)

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