ON Semiconductor NDF02N60ZG

ON Semiconductor

Product Information

Base Part Number:
NDF02
Detailed Description:
N-Channel 600V 2.4A (Tc) 24W (Tc) Through Hole TO-220FP
Input Capacitance (Ciss) (Max) @ Vds:
274pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
10.1nC @ 10V
Rds On (Max) @ Id, Vgs:
4.8Ohm @ 1A, 10V
Supplier Device Package:
TO-220FP
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
24W (Tc)
Current - Continuous Drain (Id) @ 25°C:
2.4A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NDF02N60ZG. Base Part Number: ndf02. It features n-channel 600v 2.4a (tc) 24w (tc) through hole to-220fp. The product's input capacitance at maximum includes 274pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4.5v @ 50µa. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 10.1nc @ 10v. It has a maximum Rds On and voltage of 4.8ohm @ 1a, 10v. to-220fp is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 24w (tc). The continuous current drain at 25°C is 2.4a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Qualification Assembly/Test Site 25/Sep/2014(PCN Assembly/Origin)
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NDx02N60Z(Datasheets)
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Multiple Devices 24/Jul/2015(PCN Obsolescence/ EOL)

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