This is manufactured by ON Semiconductor. The manufacturer part number is NDC651N. Base Part Number: ndc651. It features n-channel 30v 3.2a (ta) 1.6w (ta) surface mount supersot™-6. The product's input capacitance at maximum includes 290pf @ 15v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 30v drain to source voltage. The maximum Vgs rate is 20v. The maximum gate charge and given voltages include 20nc @ 10v. It has a maximum Rds On and voltage of 60mohm @ 4a, 10v. supersot™-6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sot-23-6 thin, tsot-23-6. The product carries maximum power dissipation 1.6w (ta). The continuous current drain at 25°C is 3.2a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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This is manufactured by ON Semiconductor. The manufacturer part number is NDC651N. Base Part Number: ndc651. It features n-channel 30v 3.2a (ta) 1.6w (ta) surface mount supersot™-6. The product's input capacitance at maximum includes 290pf @ 15v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 30v drain to source voltage. The maximum Vgs rate is 20v. The maximum gate charge and given voltages include 20nc @ 10v. It has a maximum Rds On and voltage of 60mohm @ 4a, 10v. supersot™-6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sot-23-6 thin, tsot-23-6. The product carries maximum power dissipation 1.6w (ta). The continuous current drain at 25°C is 3.2a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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