Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
26 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
75 W
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
11.33mm
Width:
4.83mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
1V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Maximum Drain Source Resistance:
75 mΩ
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NDB603
Detailed Description:
P-Channel 30V 30A (Tc) 75W (Tc) Surface Mount D²PAK (TO-263AB)
Input Capacitance (Ciss) (Max) @ Vds:
1570pF @ 15V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±16V
Gate Charge (Qg) (Max) @ Vgs:
36nC @ 5V
Rds On (Max) @ Id, Vgs:
25mOhm @ 19A, 10V
Supplier Device Package:
D²PAK (TO-263AB)
Packaging:
Cut Tape (CT)
Operating Temperature:
-65°C ~ 175°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
75W (Tc)
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
