Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
7.8 nC @ 5 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
48 W
Maximum Gate Source Voltage:
-15 V, +15 V
Height:
16.51mm
Width:
4.83mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
1V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Maximum Drain Source Resistance:
180 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
46 Weeks
Detailed Description:
N-Channel 60V 12A (Tc) 48W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-65°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
MTP3055
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 5V
Rds On (Max) @ Id, Vgs:
180mOhm @ 6A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
570pF @ 25V
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Customer Reference:
Power Dissipation (Max):
48W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is MTP3055VL. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 7.8 nc @ 5 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 48 w maximum power dissipation. It features a maximum gate source voltage of -15 v, +15 v. In addition, the height is 16.51mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.67mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 180 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 46 weeks of manufacturer standard lead time. It features n-channel 60v 12a (tc) 48w (tc) through hole to-220-3. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -65°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: mtp3055. The maximum gate charge and given voltages include 10nc @ 5v. It has a maximum Rds On and voltage of 180mohm @ 6a, 5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±15v. The product's input capacitance at maximum includes 570pf @ 25v. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 12a (tc). The product carries maximum power dissipation 48w (tc). This product use mosfet (metal oxide) technology.
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