ON Semiconductor MTD3055V

MTD3055V ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
25 Weeks
Detailed Description:
N-Channel 60V 12A (Ta) 3.9W (Ta), 48W (Tc) Surface Mount TO-252-3
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
MTD30
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
Rds On (Max) @ Id, Vgs:
150mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
500pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Customer Reference:
Power Dissipation (Max):
3.9W (Ta), 48W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is MTD3055V. It has typical 25 weeks of manufacturer standard lead time. It features n-channel 60v 12a (ta) 3.9w (ta), 48w (tc) surface mount to-252-3. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: mtd30. The maximum gate charge and given voltages include 17nc @ 10v. It has a maximum Rds On and voltage of 150mohm @ 6a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 500pf @ 25v. The product is available in surface mount configuration. to-252-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 12a (ta). The product carries maximum power dissipation 3.9w (ta), 48w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev 13/Aug/2020(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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MTD3055V(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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