Category:
Power MOSFET
Dimensions:
2 x 1.6 x 0.85mm
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Maximum Gate Threshold Voltage:
1.4V
Maximum Drain Source Resistance:
98 mΩ
Package Type:
MCPH
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.9 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
660 pF @ -6 V
Length:
2mm
Pin Count:
6
Typical Turn-Off Delay Time:
72 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.85mm
Typical Turn-On Delay Time:
7.4 ns
Base Part Number:
MCH63
Detailed Description:
P-Channel 12V 5A (Ta) 1.5W (Ta) Surface Mount SC-88FL/MCPH6
Input Capacitance (Ciss) (Max) @ Vds:
660pF @ 6V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.4V @ 1mA
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
6.9nC @ 4.5V
Rds On (Max) @ Id, Vgs:
43mOhm @ 3A, 4.5V
Supplier Device Package:
SC-88FL/MCPH6
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
6-SMD, Flat Leads
Power Dissipation (Max):
1.5W (Ta)
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor