ON Semiconductor ISL9N303AP3
Product Information
Detailed Description:
N-Channel 30V 75A (Tc) 215W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
ISL9
Gate Charge (Qg) (Max) @ Vgs:
172nC @ 10V
Rds On (Max) @ Id, Vgs:
3.2mOhm @ 75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7000pF @ 15V
Mounting Type:
Through Hole
Series:
UltraFET™
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Customer Reference:
Power Dissipation (Max):
215W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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You can order ON Semiconductor brand products with ISL9N303AP3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor ISL9N303AP3. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor ISL9N303AP3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14525987 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14525987.
Yes. We ship ISL9N303AP3 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is ISL9N303AP3. It features n-channel 30v 75a (tc) 215w (tc) through hole to-220-3. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: isl9. The maximum gate charge and given voltages include 172nc @ 10v. It has a maximum Rds On and voltage of 3.2mohm @ 75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 7000pf @ 15v. The product is available in through hole configuration. The product ultrafet™, is a highly preferred choice for users. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 75a (tc). The product carries maximum power dissipation 215w (tc). This product use mosfet (metal oxide) technology.
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