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This is manufactured by ON Semiconductor. The manufacturer part number is IRLW510ATM. Base Part Number: irlw51. It features n-channel 100v 5.6a (tc) 3.8w (ta), 37w (tc) through hole i2pak (to-262). The product's input capacitance at maximum includes 235pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 5v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 8nc @ 5v. It has a maximum Rds On and voltage of 440mohm @ 2.8a, 5v. i2pak (to-262) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The product carries maximum power dissipation 3.8w (ta), 37w (tc). The continuous current drain at 25°C is 5.6a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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£ 0.000
