ON Semiconductor IRLI610ATU

ON Semiconductor

Product Information

Base Part Number:
IRLI61
Detailed Description:
N-Channel 200V 3.3A (Tc) 3.1W (Ta), 33W (Tc) Through Hole I2PAK (TO-262)
Input Capacitance (Ciss) (Max) @ Vds:
240pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
5V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
9nC @ 5V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.65A, 5V
Supplier Device Package:
I2PAK (TO-262)
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max):
3.1W (Ta), 33W (Tc)
Current - Continuous Drain (Id) @ 25°C:
3.3A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is IRLI610ATU. Base Part Number: irli61. It features n-channel 200v 3.3a (tc) 3.1w (ta), 33w (tc) through hole i2pak (to-262). The product's input capacitance at maximum includes 240pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 5v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has a 200v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 9nc @ 5v. It has a maximum Rds On and voltage of 1.5ohm @ 1.65a, 5v. i2pak (to-262) is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The product carries maximum power dissipation 3.1w (ta), 33w (tc). The continuous current drain at 25°C is 3.3a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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IRLW, I610A(Datasheets)

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