Maximum Drain Source Voltage:
200 V
Typical Gate Charge @ Vgs:
40 nC @ 5 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
110 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.3mm
Width:
4.7mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
1V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Maximum Drain Source Resistance:
180 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
30 Weeks
Detailed Description:
N-Channel 200V 18A (Tc) 110W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
IRL640
Gate Charge (Qg) (Max) @ Vgs:
56nC @ 5V
Rds On (Max) @ Id, Vgs:
180mOhm @ 9A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1705pF @ 25V
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Customer Reference:
Power Dissipation (Max):
110W (Tc)
Technology:
MOSFET (Metal Oxide)
