ON Semiconductor IRL610A
Product Information
Base Part Number:
IRL61
Detailed Description:
N-Channel 200V 3.3A (Tc) 33W (Tc) Through Hole TO-220-3
Input Capacitance (Ciss) (Max) @ Vds:
240pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
5V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
9nC @ 5V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.65A, 5V
Supplier Device Package:
TO-220-3
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3
Power Dissipation (Max):
33W (Tc)
Current - Continuous Drain (Id) @ 25°C:
3.3A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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Yes. We ship IRL610A Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is IRL610A. Base Part Number: irl61. It features n-channel 200v 3.3a (tc) 33w (tc) through hole to-220-3. The product's input capacitance at maximum includes 240pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 5v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has a 200v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 9nc @ 5v. It has a maximum Rds On and voltage of 1.5ohm @ 1.65a, 5v. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 33w (tc). The continuous current drain at 25°C is 3.3a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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