ON Semiconductor IRFU220BTU_FP001
Product Information
Base Part Number:
IRFU2
Detailed Description:
N-Channel 200V 4.6A (Tc) 2.5W (Ta), 40W (Tc) Through Hole I-PAK
Input Capacitance (Ciss) (Max) @ Vds:
390pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 10V
Rds On (Max) @ Id, Vgs:
800mOhm @ 2.3A, 10V
Supplier Device Package:
I-PAK
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max):
2.5W (Ta), 40W (Tc)
Current - Continuous Drain (Id) @ 25°C:
4.6A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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Yes. We ship IRFU220BTU_FP001 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is IRFU220BTU_FP001. Base Part Number: irfu2. It features n-channel 200v 4.6a (tc) 2.5w (ta), 40w (tc) through hole i-pak. The product's input capacitance at maximum includes 390pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 200v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 16nc @ 10v. It has a maximum Rds On and voltage of 800mohm @ 2.3a, 10v. i-pak is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The product carries maximum power dissipation 2.5w (ta), 40w (tc). The continuous current drain at 25°C is 4.6a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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