ON Semiconductor IRFS634B_FP001

ON Semiconductor

Product Information

Base Part Number:
IRFS6
Detailed Description:
N-Channel 250V 8.1A (Tc) 38W (Tc) Through Hole TO-220F
Input Capacitance (Ciss) (Max) @ Vds:
1000pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
250V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Rds On (Max) @ Id, Vgs:
450mOhm @ 4.05A, 10V
Supplier Device Package:
TO-220F
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
38W (Tc)
Current - Continuous Drain (Id) @ 25°C:
8.1A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is IRFS634B_FP001. Base Part Number: irfs6. It features n-channel 250v 8.1a (tc) 38w (tc) through hole to-220f. The product's input capacitance at maximum includes 1000pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 250v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 38nc @ 10v. It has a maximum Rds On and voltage of 450mohm @ 4.05a, 10v. to-220f is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 38w (tc). The continuous current drain at 25°C is 8.1a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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IRF(S)634B(Datasheets)

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