ON Semiconductor IRFS350A

ON Semiconductor

Product Information

Base Part Number:
IRFS3
Detailed Description:
N-Channel 400V 11.5A (Tc) 92W (Tc) Through Hole TO-3PF
Input Capacitance (Ciss) (Max) @ Vds:
2780pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
400V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
131nC @ 10V
Rds On (Max) @ Id, Vgs:
300mOhm @ 5.75A, 10V
Supplier Device Package:
TO-3PF
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-3P-3 Full Pack
Power Dissipation (Max):
92W (Tc)
Current - Continuous Drain (Id) @ 25°C:
11.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is IRFS350A. Base Part Number: irfs3. It features n-channel 400v 11.5a (tc) 92w (tc) through hole to-3pf. The product's input capacitance at maximum includes 2780pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 400v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 131nc @ 10v. It has a maximum Rds On and voltage of 300mohm @ 5.75a, 10v. to-3pf is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-3p-3 full pack. The product carries maximum power dissipation 92w (tc). The continuous current drain at 25°C is 11.5a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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IRFS350A(Datasheets)

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