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ON Semiconductor HUF75639S3ST

HUF75639S3ST ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263AB)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
HUF75
Gate Charge (Qg) (Max) @ Vgs:
130nC @ 20V
Rds On (Max) @ Id, Vgs:
25mOhm @ 56A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2000pF @ 25V
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
D²PAK (TO-263AB)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
56A (Tc)
Customer Reference:
Power Dissipation (Max):
200W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is HUF75639S3ST. It has typical 8 weeks of manufacturer standard lead time. It features n-channel 100v 56a (tc) 200w (tc) surface mount d²pak (to-263ab). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: huf75. The maximum gate charge and given voltages include 130nc @ 20v. It has a maximum Rds On and voltage of 25mohm @ 56a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2000pf @ 25v. The product is available in surface mount configuration. The product ultrafet™, is a highly preferred choice for users. d²pak (to-263ab) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 56a (tc). The product carries maximum power dissipation 200w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Site Chgs 17/Sep/2020(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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HUF75639G3, P3, S3, S3S(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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FAQs

Yes. You can also search HUF75639S3ST on website for other similar products.
We accept all major payment methods for all products including ET14525650. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with HUF75639S3ST directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor HUF75639S3ST. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor HUF75639S3ST.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14525650 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14525650.
Yes. We ship HUF75639S3ST Internationally to many countries around the world.