Category:
Power MOSFET
Dimensions:
10.67 x 4.83 x 11.33mm
Maximum Continuous Drain Current:
33 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
40 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
66 nC @ 20 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1220 pF@ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
120 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
11.33mm
Typical Turn-On Delay Time:
100 ns
Minimum Operating Temperature:
-55 °C
Detailed Description:
N-Channel 100V 33A (Tc) 120W (Tc) Surface Mount D²PAK (TO-263AB)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
HUF75
Gate Charge (Qg) (Max) @ Vgs:
79nC @ 20V
Rds On (Max) @ Id, Vgs:
40mOhm @ 33A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1220pF @ 25V
Mounting Type:
Surface Mount
Series:
*
Supplier Device Package:
D²PAK (TO-263AB)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Customer Reference:
Power Dissipation (Max):
120W (Tc)
Technology:
MOSFET (Metal Oxide)
